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This allows for very fast re-drawing of the display. Transistors are embedded within the panel itself, reducing between and improving image stability. As of 2008 , many color and monitors use this technology. An application for hafnium oxide is as a. However, mass production of this device was never realized, due to complications in controlling the compound semiconductor thin film material properties, and device reliability over large areas. Conference Record of the 1988 International Display Research Conference: 56—58. Sugata fabricated an a-Si panel, and a joint and team including Mitsuhiro Yamasaki, S. Because each transistor is small, the amount of charge needed to control it is also small. Molecular Crystals and Liquid Crystals. In 1988, a research team led by engineer T. This information should not be considered complete, up to date, and is not intended to be used in place of a visit, consultation, or advice of a legal, medical, or any other professional. In 1992, Toshiba and introduced a 12. Because conventional substrates cannot withstand high annealing temperatures, the deposition process must be completed under relatively low temperatures.。 。 。 。 。 。 。
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